Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios
The invention provides a chemical-mechanical polishing composition comprising a cationic abrasive, a cationic polymer, an inorganic halide salt, and an aqueous carrier. The invention further provides a method of chemically-mechanically polishing a substrate with the aforementioned polishing composit...
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| Main Authors | , |
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| Format | Patent |
| Language | English |
| Published |
12.05.2009
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| Online Access | Get full text |
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| Summary: | The invention provides a chemical-mechanical polishing composition comprising a cationic abrasive, a cationic polymer, an inorganic halide salt, and an aqueous carrier. The invention further provides a method of chemically-mechanically polishing a substrate with the aforementioned polishing composition. The polishing composition exhibits selectivity for removal of silicon nitride over removal of silicon oxide and polysilicon. |
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