Semiconductor device

• Main Authors: Kohjiro, Iwamichi, Nunogawa, Yasuhiro, Kikuchi, Sakae, Kondo, Shizuo, Adachi, Tetsuaki, Kagaya, Osamu, Sekine, Kenji, Hase, Eiichi, Yamashita, Kiichi
• Format: Patent
• Language: English
• Published: 28.04.2009

In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip which is mounted on a main surface of a wiring substrate, and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is place at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is.