Method of forming a semiconductor device and structure thereof

A method for forming a semiconductor device includes providing a semiconductor substrate comprising silicon, forming a layer of dielectric on the surface of the semiconductor substrate, forming a gate electrode comprising silicon over the layer of dielectric, recessing the layer of dielectric under...

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Bibliographic Details
Main Authors Li, Chi Nan Brian, Chang, Ko-Min, Hong, Cheong M
Format Patent
LanguageEnglish
Published 21.04.2009
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Summary:A method for forming a semiconductor device includes providing a semiconductor substrate comprising silicon, forming a layer of dielectric on the surface of the semiconductor substrate, forming a gate electrode comprising silicon over the layer of dielectric, recessing the layer of dielectric under the gate electrode, filling the recess with a discrete charge storage material, oxidizing a portion of the gate electrode, and oxidizing a portion of the semiconductor substrate.