Semiconductor system having a ring laser fabricated by expitaxial layer overgrowth

The present invention provides a ring laser system comprising forming an optical core by an epitaxial layer overgrowth over an intermediate layer, forming multi-quantum wells adjacent to the optical core and forming an outer structure further comprising a total internal reflector, wherein forming ph...

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Main Authors Tan, Michael R. T, Corzine, Scott W, Bour, David P
Format Patent
LanguageEnglish
Published 10.03.2009
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Abstract The present invention provides a ring laser system comprising forming an optical core by an epitaxial layer overgrowth over an intermediate layer, forming multi-quantum wells adjacent to the optical core and forming an outer structure further comprising a total internal reflector, wherein forming photons within the multi-quantum wells further comprises circulating the photons within the ring laser structure comprising the outer structure, the multi-quantum wells, and the optical core.
AbstractList The present invention provides a ring laser system comprising forming an optical core by an epitaxial layer overgrowth over an intermediate layer, forming multi-quantum wells adjacent to the optical core and forming an outer structure further comprising a total internal reflector, wherein forming photons within the multi-quantum wells further comprises circulating the photons within the ring laser structure comprising the outer structure, the multi-quantum wells, and the optical core.
Author Corzine, Scott W
Bour, David P
Tan, Michael R. T
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References B.Beaumont, S.Haffouz,andP.Gibart, "Magnesium induced changes in the selective growth of GaN by metal organic vapor phase epitaxy", Applied Physics Letters, vol. 72, No. 823, Feb. 1998, pp. 921-923.
K. Hiramatsu, K. Nishiyama, M, Onishi,H. Mizutani, M. Narukawa, A. Motogaito, H. Miyake, Y. Iyechika, and T. Maeda, "Fabrication and characterization of low defect density GaN using facet-controlled epitaxial lateral overgrowth (FACELO)", Journal of Crystal Growth, 221 (2000), pp. 316-326.
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Snippet The present invention provides a ring laser system comprising forming an optical core by an epitaxial layer overgrowth over an intermediate layer, forming...
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Title Semiconductor system having a ring laser fabricated by expitaxial layer overgrowth
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