Semiconductor system having a ring laser fabricated by expitaxial layer overgrowth

The present invention provides a ring laser system comprising forming an optical core by an epitaxial layer overgrowth over an intermediate layer, forming multi-quantum wells adjacent to the optical core and forming an outer structure further comprising a total internal reflector, wherein forming ph...

Full description

Saved in:
Bibliographic Details
Main Authors Tan, Michael R. T, Corzine, Scott W, Bour, David P
Format Patent
LanguageEnglish
Published 10.03.2009
Online AccessGet full text

Cover

More Information
Summary:The present invention provides a ring laser system comprising forming an optical core by an epitaxial layer overgrowth over an intermediate layer, forming multi-quantum wells adjacent to the optical core and forming an outer structure further comprising a total internal reflector, wherein forming photons within the multi-quantum wells further comprises circulating the photons within the ring laser structure comprising the outer structure, the multi-quantum wells, and the optical core.