Semiconductor memory device and defect remedying method thereof

A semiconductor memory device formed on a semiconductor chip includes first memory arrays, a plurality of second memory arrays, a first voltage generator, and first bonding pads. The semiconductor chip is divided into first, second and third rectangle regions and the third rectangle region is arrang...

Full description

Saved in:
Bibliographic Details
Main Authors Kajigaya, Kazuhiko, Miyazawa, Kazuyuki, Tsunozaki, Manabu, Oshima, Kazuyoshi, Yamazaki, Takashi, Sakai, Yuji, Sawada, Jiro, Yamaguchi, Yasunori, Matsumoto, Tetsurou, Udo, Shinji, Yoshioka, Hiroshi, Saito, Hirokazu, Takano, Mitsuhiro, Morino, Makoto, Miyatake, Sinichi, Miyamoto, Eiji, Kasama, Yasuhiro, Endo, Akira, Hori, Ryoichi, Etoh, Jun, Horiguchi, Masashi, Ikenaga, Shinichi, Kumata, Atsushi
Format Patent
LanguageEnglish
Published 03.03.2009
Online AccessGet full text

Cover

More Information
Summary:A semiconductor memory device formed on a semiconductor chip includes first memory arrays, a plurality of second memory arrays, a first voltage generator, and first bonding pads. The semiconductor chip is divided into first, second and third rectangle regions and the third rectangle region is arranged between the first rectangle region and the second rectangle region. The first memory arrays are formed in the first rectangle region. The second memory arrays are formed in the second rectangle region. The voltage generator and first bonding pads are arranged in the third rectangle region. The first bonding pads are arranged between the first rectangle region and the voltage generator and no bonding pads are arranged between the voltage generator and the second memory arrays.