Post thermal treatment methods of forming high dielectric layers over interfacial layers in integrated circuit devices

High dielectric layers formed from layers of hafnium oxide, zirconium oxide, aluminum oxide, yttrium oxide, and/or other metal oxides and silicates disposed on silicon substrates or ozone oxide layers over silicon substrates may be nitrided and post thermally treated by oxidation, annealing, or a co...

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Bibliographic Details
Main Authors Doh, Seok-Joo, Jung, Hyung-suk, Lee, Nae-in, Lee, Jong-ho, Kim, Yun-seok
Format Patent
LanguageEnglish
Published 24.02.2009
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Summary:High dielectric layers formed from layers of hafnium oxide, zirconium oxide, aluminum oxide, yttrium oxide, and/or other metal oxides and silicates disposed on silicon substrates or ozone oxide layers over silicon substrates may be nitrided and post thermally treated by oxidation, annealing, or a combination of oxidation and annealing to form high dielectric layers having superior mobility and interfacial characteristics.