Multi-bit phase change memory cell and multi-bit phase change memory including the same, method of forming a multi-bit phase change memory, and method of programming a multi-bit phase change memory

A multi-bit phase change memory cell including a stack of a plurality of conductive layers and a plurality of phase change material layers, each of the phase change material layers disposed between a corresponding pair of conductive layers and having electrical resistances that are different from on...

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Bibliographic Details
Main Authors Hamann, Hendrik F, Lam, Chung Hon, Steen, Michelle Leigh, Wong, Hon-Sum Philip
Format Patent
LanguageEnglish
Published 03.02.2009
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Summary:A multi-bit phase change memory cell including a stack of a plurality of conductive layers and a plurality of phase change material layers, each of the phase change material layers disposed between a corresponding pair of conductive layers and having electrical resistances that are different from one another.