Marker structure, mask pattern, alignment method and lithographic method and apparatus

A mask pattern for imaging a marker structure on a substrate with a lithographic apparatus, the marker structure being configured to determine optical alignment or overlay, includes constituent parts to define the marker structure. The constituent parts include a plurality of segments, each segment...

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Main Authors Finders, Jozef Maria, Dusa, Mircea, Van Haren, Richard Johannes Franciscus, Colina, Luis Alberto Colina Santamaria, Hendrickx, Eric Henri Jan, Vandenberghe, Geert, Van Der Hoff, Alexander Hendrikus Martinus
Format Patent
LanguageEnglish
Published 16.12.2008
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Summary:A mask pattern for imaging a marker structure on a substrate with a lithographic apparatus, the marker structure being configured to determine optical alignment or overlay, includes constituent parts to define the marker structure. The constituent parts include a plurality of segments, each segment having substantially a size of a device feature and a segment shape. The mask pattern includes at least one assist feature located at a critical part of the segment shape. The at least one assist feature has substantially a size below a resolution of the lithographic projection and is configured to counteract optical aberrations or optical limitations generated in the lithographic projection at the critical part.