Bipolar transistor with collector having an epitaxial Si:C region

CBA structure and method where C is incorporated into the collector region of a heterojunction bipolar device by a method which does not include C ion implantation are provided. In the present invention, C is incorporated into the collector by epitaxy in a perimeter trench etched into the collector...

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Bibliographic Details
Main Authors Freeman, Gregory G, Khater, Marwan H, Krishnasamy, Rajendran, Schonenberg, Kathryn T, Stricker, Andreas D
Format Patent
LanguageEnglish
Published 28.10.2008
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Summary:CBA structure and method where C is incorporated into the collector region of a heterojunction bipolar device by a method which does not include C ion implantation are provided. In the present invention, C is incorporated into the collector by epitaxy in a perimeter trench etched into the collector region to better control the carbon profile and location. The trench is formed by etching the collector region using the trench isolation regions and a patterned layer over the center part of the collector as masks. Then, Si:C is grown using selective epitaxy inside the trench to form a Si:C region with sharp and well-defined edges. The depth, width and C content can be optimized to control and tailor the collector implant diffusion and to reduce the perimeter component of parasitic C.