Method and apparatus for diverting void diffusion in integrated circuit conductors
A method of diverting void diffusion in an integrated circuit includes steps of forming an electrical conductor having a boundary in a first electrically conductive layer of an integrated circuit, forming a via inside the boundary of the electrical conductor in a dielectric layer between the first e...
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Main Authors | , , , , , , , |
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Format | Patent |
Language | English |
Published |
14.10.2008
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Online Access | Get full text |
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Summary: | A method of diverting void diffusion in an integrated circuit includes steps of forming an electrical conductor having a boundary in a first electrically conductive layer of an integrated circuit, forming a via inside the boundary of the electrical conductor in a dielectric layer between the first electrically conductive layer and a second electrically conductive layer of the integrated circuit, and forming a slot between the via and the boundary of the electrical conductor for diverting void diffusion in the electrical conductor away from the via. |
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