Phase changable memory device structures

A phase-changeable memory device may include a substrate, an insulating layer on the substrate, first and second electrodes, and a pattern of a phase-changeable material between the first and second electrodes. More particularly, the insulating layer may have a hole therein, and the first electrode...

Full description

Saved in:
Bibliographic Details
Main Authors Horii, Hideki, Joo, Suk-Ho, Yi, Ji-Hye
Format Patent
LanguageEnglish
Published 08.07.2008
Online AccessGet full text

Cover

More Information
Summary:A phase-changeable memory device may include a substrate, an insulating layer on the substrate, first and second electrodes, and a pattern of a phase-changeable material between the first and second electrodes. More particularly, the insulating layer may have a hole therein, and the first electrode may be in the hole in the insulating layer. Moreover, portions of the second electrode may extend beyond an edge of the pattern of phase-changeable material. Related methods are also discussed.