Radio-frequency switch circuit and semiconductor device
Switch sections composed of a plurality of FETs to and to connected in series are provided between input/output terminals and and ground terminals and , and between the input/output terminals to . A plurality of gate bias resistors to to are also provided. One terminal of each gate bias resistor is...
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| Main Authors | , |
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| Format | Patent |
| Language | English |
| Published |
24.06.2008
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| Online Access | Get full text |
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| Summary: | Switch sections composed of a plurality of FETs to and to connected in series are provided between input/output terminals and and ground terminals and , and between the input/output terminals to . A plurality of gate bias resistors to to are also provided. One terminal of each gate bias resistor is connected to a gate electrode of a corresponding one of the FETs to and to , while a control voltage and for switching an ON state and an OFF state of the switch section is applied to the other terminal. Among the FETs included in each switch section, concerning the FETs , and to which signal power is applied when the switch section is in the OFF state, the gate bias resistors , and connected to the gate electrodes are set to have a highest resistance value. |
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