N-type carbon nanotube field effect transistor and method of fabricating the same
Provided are an n-type carbon nanotube field effect transistor (CNT FET) and a method of fabricating the n-type CNT FET. The n-type CNT FET may include a substrate; electrodes formed on the substrate and separated from each other; a CNT forrmed on the substrate and electrically connected to the elec...
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Main Authors | , , |
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Format | Patent |
Language | English |
Published |
03.06.2008
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Online Access | Get full text |
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Summary: | Provided are an n-type carbon nanotube field effect transistor (CNT FET) and a method of fabricating the n-type CNT FET. The n-type CNT FET may include a substrate; electrodes formed on the substrate and separated from each other; a CNT forrmed on the substrate and electrically connected to the electrodes; a gate oxide layer formed on the CNT; and a gate electrode formed on the gate oxide layer, wherein the gate oxide layer contains electron donor atoms which donate electrons to the CNT such that the CNT may be n-doped by the electron donor atoms. |
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