Low metal porous silica dielectric for integral circuit applications

The invention relates to the production of nanoporous silica dielectric films and to semiconductor devices and integrated circuits comprising these improved films. The nanoporous films of the invention are prepared using silicon containing pre-polymers and are prepared by a process that allows cross...

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Bibliographic Details
Main Authors Leung, Roger Y, Deng, Eric, Xie, Songyuan, Lu, Victor Y
Format Patent
LanguageEnglish
Published 03.06.2008
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Summary:The invention relates to the production of nanoporous silica dielectric films and to semiconductor devices and integrated circuits comprising these improved films. The nanoporous films of the invention are prepared using silicon containing pre-polymers and are prepared by a process that allows crosslinking at lowered gel temperatures by means of a metal-ion-free onium or nucleophile catalyst.