Method of forming an interconnect structure diffusion barrier with high nitrogen content

xIn an interconnect structure of an integrated circuit, a diffusion barrier film in a damascene structure is formed of a film having the composition TaN, where x is greater than 1.2 and with a thickness of 0.5 to 5 nm.

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Bibliographic Details
Main Authors Cabral, Jr, Cyril, Kaldor, Steffen K, Kim, Hyungjun, Rossnagel, Stephen M
Format Patent
LanguageEnglish
Published 27.05.2008
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Summary:xIn an interconnect structure of an integrated circuit, a diffusion barrier film in a damascene structure is formed of a film having the composition TaN, where x is greater than 1.2 and with a thickness of 0.5 to 5 nm.