CMOS devices with improved gap-filling

• Main Authors: Hsu, Ju-Wang, Ko, Chih-Hsin, Shieh, Jyu-Horng, Perng, Baw-Ching, Jang, Syun-Ming
• Format: Patent
• Language: English
• Published: 27.05.2008

A semiconductor structure includes a substrate, and a first MOS device on the first region of the substrate wherein the first MOS device includes a first spacer liner. The semiconductor structure further includes a second MOS device on the second region wherein the second MOS device includes a secon...