CMOS devices with improved gap-filling

A semiconductor structure includes a substrate, and a first MOS device on the first region of the substrate wherein the first MOS device includes a first spacer liner. The semiconductor structure further includes a second MOS device on the second region wherein the second MOS device includes a secon...

Full description

Saved in:
Bibliographic Details
Main Authors Hsu, Ju-Wang, Ko, Chih-Hsin, Shieh, Jyu-Horng, Perng, Baw-Ching, Jang, Syun-Ming
Format Patent
LanguageEnglish
Published 27.05.2008
Online AccessGet full text

Cover

More Information
Summary:A semiconductor structure includes a substrate, and a first MOS device on the first region of the substrate wherein the first MOS device includes a first spacer liner. The semiconductor structure further includes a second MOS device on the second region wherein the second MOS device includes a second spacer liner. A first stressed film having a first thickness is formed over the first MOS device and directly on the first spacer liner. A second stressed film having a second thickness is formed over the second MOS device and directly on the second spacer liner. The first and the second stressed films may be formed of a same material.