Means to establish orientation of ion beam to wafer and correct angle errors
One or more aspects of the present invention pertain to a measurement component that facilitates determining a relative orientation between an ion beam and a workpiece. The measurement component is sensitive to ion radiation and allows a relative orientation between the measurement component and the...
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Main Authors | , |
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Format | Patent |
Language | English |
Published |
22.04.2008
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Online Access | Get full text |
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Summary: | One or more aspects of the present invention pertain to a measurement component that facilitates determining a relative orientation between an ion beam and a workpiece. The measurement component is sensitive to ion radiation and allows a relative orientation between the measurement component and the ion beam to be accurately determined by moving the measurement component relative to the ion beam. The measurement component is oriented at a known relationship relative to the workpiece so that a relative orientation between the workpiece and beam can be established. Knowing the relative orientation between the ion beam and workpiece allows the workpiece to be oriented to a specific angle relative to the measured beam angle for more accurate and precise doping of the workpiece, which enhances semiconductor fabrication. |
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