Ultralow dielectric constant layer with controlled biaxial stress

A method for forming a ultralow dielectric constant layer with controlled biaxial stress is described incorporating the steps of forming a layer containing Si, C, O and H by one of PECVD and spin-on coating and curing the film in an environment containing very low concentrations of oxygen and water...

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Bibliographic Details
Main Authors Dimitrakopoulos, Christos Dimitrios, Gates, Stephen McConnell, Grill, Alfred, Lane, Michael Wayne, Liniger, Eric Gerhard, Liu, Xiao Hu, Nguyen, Son Van, Neumayer, Deborah Ann, Shaw, Thomas McCarroll
Format Patent
LanguageEnglish
Published 15.04.2008
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Summary:A method for forming a ultralow dielectric constant layer with controlled biaxial stress is described incorporating the steps of forming a layer containing Si, C, O and H by one of PECVD and spin-on coating and curing the film in an environment containing very low concentrations of oxygen and water each less than 10 ppm. A material is also described by using the method with a dielectric constant of not more than 2.8. The invention overcomes the problem of forming films with low biaxial stress less than 46 MPa.