Methods of forming trench isolation layers using high density plasma chemical vapor deposition

A method of forming a trench isolation layer can include forming an isolation layer in a trench using High Density Plasma Chemical Vapor Deposition (HDPCVD) with a carrier gas comprising hydrogen. Other methods are disclosed.

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Bibliographic Details
Main Authors Cha, Yong-Won, Na, Kyu-Tae, Choi, Yong-Soon, Hong, Eunkee, Goo, Ju-Seon
Format Patent
LanguageEnglish
Published 19.02.2008
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Summary:A method of forming a trench isolation layer can include forming an isolation layer in a trench using High Density Plasma Chemical Vapor Deposition (HDPCVD) with a carrier gas comprising hydrogen. Other methods are disclosed.