Semiconductor device and method of manufacturing the same
Disclosed is a semiconductor device comprising a semiconductor substrate, a capacitor structure formed above the semiconductor substrate and comprising a first electrode, a second electrode provided below the first electrode, a third electrode provided below the second electrode, a first dielectric...
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| Format | Patent |
| Language | English |
| Published |
25.12.2007
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| Online Access | Get full text |
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| Summary: | Disclosed is a semiconductor device comprising a semiconductor substrate, a capacitor structure formed above the semiconductor substrate and comprising a first electrode, a second electrode provided below the first electrode, a third electrode provided below the second electrode, a first dielectric film provided between the first electrode and the second electrode, and a second dielectric film provided between the second electrode and the third electrode, an insulating film covering the capacitor structure and having a first hole reaching the first electrode, a second hole reaching the second electrode, and a third hole reaching the third electrode, a first conductive connection electrically connecting the first electrode and the third electrode and having portions buried in the first and third holes, and a second conductive connection formed separately from the first conductive connection and having a portion buried in the second hole. |
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