Integrated circuits protected against reverse engineering and method for fabricating the same using an apparent metal contact line terminating on field oxide

Semiconducting devices, including integrated circuits, protected from reverse engineering comprising metal traces leading to field oxide. Metallization usually leads to the gate, source or drain areas of the circuit, but not to the insulating field oxide, thus misleading a reverse engineer. A method...

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Bibliographic Details
Main Authors Chow, Lap-Wai, Baukus, James P, Clark, Jr, William M
Format Patent
LanguageEnglish
Published 13.11.2007
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Summary:Semiconducting devices, including integrated circuits, protected from reverse engineering comprising metal traces leading to field oxide. Metallization usually leads to the gate, source or drain areas of the circuit, but not to the insulating field oxide, thus misleading a reverse engineer. A method for fabricating such devices.