Method for fabricating a nitrided silicon-oxide gate dielectric

A method of fabricating a gate dielectric layer, including: providing a substrate; forming a silicon dioxide layer on a top surface of the substrate; performing a plasma nitridation in a reducing atmosphere to convert the silicon dioxide layer into a silicon oxynitride layer. The dielectric layer so...

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Bibliographic Details
Main Authors Burnham, Jay S, Nakos, James S, Quinlivan, James J, Roque, Jr, Bernie A, Shank, Steven M, Ward, Beth A
Format Patent
LanguageEnglish
Published 06.11.2007
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Summary:A method of fabricating a gate dielectric layer, including: providing a substrate; forming a silicon dioxide layer on a top surface of the substrate; performing a plasma nitridation in a reducing atmosphere to convert the silicon dioxide layer into a silicon oxynitride layer. The dielectric layer so formed may be used in the fabrication of MOSFETs.