Copper interconnect wiring and method of forming thereof

Capping layer or layers on a surface of a copper interconnect wiring layer for use in interconnect structures for integrated circuits and methods of forming improved integration interconnection structures for integrated circuits by the application of gas-cluster ion-beam processing. Reduced copper d...

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Bibliographic Details
Main Authors Geffken, Robert M, Hautala, John J, Sherman, Steven R, Learn, Arthur J
Format Patent
LanguageEnglish
Published 06.11.2007
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Summary:Capping layer or layers on a surface of a copper interconnect wiring layer for use in interconnect structures for integrated circuits and methods of forming improved integration interconnection structures for integrated circuits by the application of gas-cluster ion-beam processing. Reduced copper diffusion and improved electromigration lifetime result and the use of selective metal capping techniques and their attendant yield problems are avoided.