Semiconductor devices including stress inducing layers

A semiconductor device may include a substrate and a fin shaped semiconductor region on the substrate. The fin shaped semiconductor region may include a channel region and first and second junction regions on opposite sides of the channel region. A gate electrode may be provided on the channel regio...

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Bibliographic Details
Main Authors Oh, Chang-woo, Park, Dong-gun, Kim, Dong-won, Suk, Sung-dae
Format Patent
LanguageEnglish
Published 18.09.2007
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Summary:A semiconductor device may include a substrate and a fin shaped semiconductor region on the substrate. The fin shaped semiconductor region may include a channel region and first and second junction regions on opposite sides of the channel region. A gate electrode may be provided on the channel region of the fin shaped semiconductor region, and a stress inducing layer on the fin shaped semiconductor region.