Deposition of nano-crystal silicon using a single wafer chamber

Numerous embodiments of a method for depositing a layer of nano-crystal silicon on a substrate. In one embodiment of the present invention, a substrate is placed in a single wafer chamber and heated to a temperature between about 300° C. to about 490° C. A silicon source is also fed into the single...

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Bibliographic Details
Main Authors Panayil, Sheeba J, Li, Ming, Wang, Shulin, Pickering, Jonathan C
Format Patent
LanguageEnglish
Published 04.09.2007
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Summary:Numerous embodiments of a method for depositing a layer of nano-crystal silicon on a substrate. In one embodiment of the present invention, a substrate is placed in a single wafer chamber and heated to a temperature between about 300° C. to about 490° C. A silicon source is also fed into the single wafer chamber.