Bilayered metal hardmasks for use in dual damascene etch schemes

A metal hardmask for use with a Dual Damascene process used in the manufacturing of semiconductor devices. The metal hardmask has advantageous translucent characteristics to facilitate alignment between levels while fabricating a semiconductor device and avoids the formation of metal oxide residue d...

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Main Authors Kumar, Kaushik, Clevenger, Lawrence, Dalton, Timothy, La Tulipe, Douglas C, Cowley, Andy, Kaltalioglu, Erdem, Schacht, Jochen, Simon, Andrew H, Hoinkis, Mark, Kaldor, Steffen K, Yang, Chih-Chao
Format Patent
LanguageEnglish
Published 10.07.2007
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Summary:A metal hardmask for use with a Dual Damascene process used in the manufacturing of semiconductor devices. The metal hardmask has advantageous translucent characteristics to facilitate alignment between levels while fabricating a semiconductor device and avoids the formation of metal oxide residue deposits. The metal hardmask comprises a first or primary layer of TiN (titanium nitride) and a second or capping layer of TaN (tantalum nitride).