Volatile memory devices and methods for forming same

A method for forming a volatile memory device. A substrate comprising a pair of neighboring trenches is provided, each trench comprising a capacitor. A collar insulating layer is formed on an upper sidewall of each trench. The collar insulating layer comprises a low level portion and a high level po...

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Bibliographic Details
Main Authors Hung, Chin-Long, Chang, Hong-Long, Lee, Yueh-Chuan
Format Patent
LanguageEnglish
Published 10.07.2007
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Summary:A method for forming a volatile memory device. A substrate comprising a pair of neighboring trenches is provided, each trench comprising a capacitor. A collar insulating layer is formed on an upper sidewall of each trench. The collar insulating layer comprises a low level portion and a high level portion adjacent to a predetermined active area of the volatile memory device.