Polymer, resist composition, and patterning process
A chemically amplified resist composition using an alternating copolymer of α-trifluoroacrylic acid with norbornene as a base polymer lends itself to ArF laser lithographic micropatterning and is improved in transparency, plasma etching resistance, and line edge roughness.
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Main Authors | , , , , , , , , |
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Format | Patent |
Language | English |
Published |
10.07.2007
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Online Access | Get full text |
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Summary: | A chemically amplified resist composition using an alternating copolymer of α-trifluoroacrylic acid with norbornene as a base polymer lends itself to ArF laser lithographic micropatterning and is improved in transparency, plasma etching resistance, and line edge roughness. |
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