Polymer, resist composition, and patterning process

A chemically amplified resist composition using an alternating copolymer of α-trifluoroacrylic acid with norbornene as a base polymer lends itself to ArF laser lithographic micropatterning and is improved in transparency, plasma etching resistance, and line edge roughness.

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Bibliographic Details
Main Authors Hatakeyama, Jun, Harada, Yuji, Kawai, Yoshio, Sasago, Masaru, Endo, Masayuki, Kishimura, Shinji, Maeda, Kazuhiko, Komoriya, Haruhiko, Yamanaka, Kazuhiro
Format Patent
LanguageEnglish
Published 10.07.2007
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Summary:A chemically amplified resist composition using an alternating copolymer of α-trifluoroacrylic acid with norbornene as a base polymer lends itself to ArF laser lithographic micropatterning and is improved in transparency, plasma etching resistance, and line edge roughness.