Etch stop layer system

19 319 3A semiconductor structure including a uniform etch-stop layer. The uniform etch stop layer has a relative etch rate which is less than approximately the relative etch rate of Si doped with 7×10boron atoms/cm. A method for forming a semiconductor structure includes forming a uniform etch-stop...

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Bibliographic Details
Main Authors Wu, Kenneth C, Fitzgerald, Eugene A, Taraschi, Gianni, Borenstein, Jeffrey T
Format Patent
LanguageEnglish
Published 05.06.2007
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Summary:19 319 3A semiconductor structure including a uniform etch-stop layer. The uniform etch stop layer has a relative etch rate which is less than approximately the relative etch rate of Si doped with 7×10boron atoms/cm. A method for forming a semiconductor structure includes forming a uniform etch-stop layer providing a handle wafer, and bonding the uniform etch-stop layer to the handle wafer. The uniform etch-stop layer has a relative etch rate which is less than approximately the relative etch rate of Si doped with 7×10boron atoms/cm.