Method of plasma etching high-K dielectric materials with high selectivity to underlying layers

A method of plasma etching a layer of dielectric material having a dielectric constant that is greater than four (4). The method includes exposing the dielectric material layer to a plasma comprising a hydrocarbon gas and a halogen containing gas.

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Bibliographic Details
Main Authors Nallan, Padmapani C, Jin, Guangxiang, Kumar, Ajay
Format Patent
LanguageEnglish
Published 15.05.2007
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Summary:A method of plasma etching a layer of dielectric material having a dielectric constant that is greater than four (4). The method includes exposing the dielectric material layer to a plasma comprising a hydrocarbon gas and a halogen containing gas.