Interlevel dielectric layer and metal layer sealing

Methods for sealing an organic ILD layer and a metal layer after an etching step. The method includes etching through an ILD layer and leaving a remaining portion of an underlying metal layer cap, maintaining the device in an inert gas, and depositing at least a portion of a liner into the opening t...

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Main Authors Angyal, Matthew S, Biolsi, Peter E, Clevenger, Lawrence A, Hichri, Habib, Kastenmeier, Bernd E, Lane, Michael W, Marino, Jeffrey R, McGahay, Vincent J, Standaert, Theodorus E
Format Patent
LanguageEnglish
Published 08.05.2007
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Summary:Methods for sealing an organic ILD layer and a metal layer after an etching step. The method includes etching through an ILD layer and leaving a remaining portion of an underlying metal layer cap, maintaining the device in an inert gas, and depositing at least a portion of a liner into the opening to seal the ILD layer and the metal layer. Subsequent processing may include formation of a via by etching through the portion of the liner and the remaining portion of the cap layer, and depositing a metal.