Methods of forming atomic layers of a material on a substrate by sequentially introducing precursors of the material

• Main Authors: Park, In-Sung, Chung, Jeong-Hee, Yeo, Jae-Hyun
• Format: Patent
• Language: English
• Published: 10.04.2007

A thin film is formed using an atomic layer deposition process, by introducing a first reacting material including tantalum precursors and titanium precursors onto a substrate. A portion of the first reacting material is chemisorbed onto the substrate. Then, a second reacting material including oxygen is introduced onto the substrate. A portion of the second reacting material is also chemisorbed onto the substrate, to form an atomic layer of a solid material on the substrate. The solid material may be used as a dielectric layer of the capacitor and/or a gate dielectric layer of the transistor.