Transistor, method for producing an integrated circuit and a method of producing a metal silicide layer

The invention relates to a method for the selective silicidation of contact areas that allow the production of highly integrated circuits, preferably in a SMOS or BiCMOS process. To this end, a metal oxide layer that contains for example praseodymium oxide is deposited onto a prepared wafer. A silic...

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Bibliographic Details
Main Authors Goryachko, Andriy, Kurps, Rainer, Liu, Jing Ping, Osten, Hans-Jörg
Format Patent
LanguageEnglish
Published 27.03.2007
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Summary:The invention relates to a method for the selective silicidation of contact areas that allow the production of highly integrated circuits, preferably in a SMOS or BiCMOS process. To this end, a metal oxide layer that contains for example praseodymium oxide is deposited onto a prepared wafer. A silicon layer and on top of said silicon layer a cover layer is deposited onto the metal oxide layer, said cover layer being laterally structured. In a subsequent tempering step in an oxygen-free, reducing gas atmosphere the silicon layer and the metal oxide layer are converted to a metal silicide layer in lateral sections in which the cover layer was previously removed.