Metal line having an increased resistance to electromigration along an interface of a dielectric barrier layer by implanting material into the metal line

During the formation of a metallization layer of a semiconductor device, a cap layer is formed above a metal line and subsequently an implantation process is performed so as to modify the metal in the vicinity of the interface between the cap layer and the metal line. Consequently, an improved behav...

Full description

Saved in:
Bibliographic Details
Main Authors Engelmann, Hans-Juergen, Zschech, Ehrenfried, Huebler, Peter
Format Patent
LanguageEnglish
Published 27.02.2007
Online AccessGet full text

Cover

More Information
Summary:During the formation of a metallization layer of a semiconductor device, a cap layer is formed above a metal line and subsequently an implantation process is performed so as to modify the metal in the vicinity of the interface between the cap layer and the metal line. Consequently, an improved behavior in view of electromigration of the metal line may be obtained, thereby increasing device reliability.