Ultra thin, single phase, diffusion barrier for metal conductors

6The present invention is directed to an alpha-W layer which is employed in interconnect structures such as trench capacitors or damascene wiring levels as a diffusion barrier layer. The alpha-W layer is a single phased material that is formed by a low temperature/pressure chemical vapor deposition...

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Bibliographic Details
Main Authors Cohen, Stephan Alan, McFeely, Fenton Read, Noyan, Cevdet Ismail, Rodbell, Kenneth Parker, Rosenberg, Robert, Yurkas, John Jacob
Format Patent
LanguageEnglish
Published 06.02.2007
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Summary:6The present invention is directed to an alpha-W layer which is employed in interconnect structures such as trench capacitors or damascene wiring levels as a diffusion barrier layer. The alpha-W layer is a single phased material that is formed by a low temperature/pressure chemical vapor deposition process using tungsten hexacarbonyl, W(CO), as the source material.