Polymer compound, resist material and pattern formation method
12 3 4 5 6 7 28910 11 13213213 122138910 11 132131213 12213 13 The base polymer of a resist material contains a polymer compound including a first unit represented by a general formula of the following Chemical Formula 4 and a second unit represented by a general formula of the following Chemical Fo...
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30.01.2007
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Abstract | 12 3 4 5 6 7 28910 11 13213213 122138910 11 132131213 12213 13 The base polymer of a resist material contains a polymer compound including a first unit represented by a general formula of the following Chemical Formula 4 and a second unit represented by a general formula of the following Chemical Formula 5: wherein R, Rand Rare the same or different and are a hydrogen atom, a fluorine atom, or a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20; Ris a straight-chain alkylene group or a branched or cyclic alkylene group with a carbon number not less than 0 and not more than 20; Rand Rare the same or different and are a hydrogen atom, a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20, or a protecting group released by an acid; Ris a methylene group, an oxygen atom, a sulfur atom or -SO-; R, R, Rand Rare the same or different and are a hydrogen atom, a fluorine atom, a hydroxyl group, -OR, COR, -R-ORor -R-COR, at least one of R, R, Rand Rincluding -OR, -COR, -R-ORor -R-COR(wherein R 2 is a straight-chain alkylene group, a branched or cyclic alkylene group or a fluoridated alkylene group with a carbon number not less than 1 and not more than 20 and Ris a hydrogen atom, a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20, or a protecting group released by an acid); 0<a<1; 0<b<1; and c is 0 or 1. |
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AbstractList | 12 3 4 5 6 7 28910 11 13213213 122138910 11 132131213 12213 13 The base polymer of a resist material contains a polymer compound including a first unit represented by a general formula of the following Chemical Formula 4 and a second unit represented by a general formula of the following Chemical Formula 5: wherein R, Rand Rare the same or different and are a hydrogen atom, a fluorine atom, or a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20; Ris a straight-chain alkylene group or a branched or cyclic alkylene group with a carbon number not less than 0 and not more than 20; Rand Rare the same or different and are a hydrogen atom, a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20, or a protecting group released by an acid; Ris a methylene group, an oxygen atom, a sulfur atom or -SO-; R, R, Rand Rare the same or different and are a hydrogen atom, a fluorine atom, a hydroxyl group, -OR, COR, -R-ORor -R-COR, at least one of R, R, Rand Rincluding -OR, -COR, -R-ORor -R-COR(wherein R 2 is a straight-chain alkylene group, a branched or cyclic alkylene group or a fluoridated alkylene group with a carbon number not less than 1 and not more than 20 and Ris a hydrogen atom, a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20, or a protecting group released by an acid); 0<a<1; 0<b<1; and c is 0 or 1. |
Author | Ueda, Mitsuru Sasago, Masaru Endo, Masayuki Imori, Hirokazu Kishimura, Shinji Fukuhara, Toshiaki |
Author_xml | – sequence: 1 givenname: Shinji surname: Kishimura fullname: Kishimura, Shinji – sequence: 2 givenname: Masayuki surname: Endo fullname: Endo, Masayuki – sequence: 3 givenname: Masaru surname: Sasago fullname: Sasago, Masaru – sequence: 4 givenname: Mitsuru surname: Ueda fullname: Ueda, Mitsuru – sequence: 5 givenname: Hirokazu surname: Imori fullname: Imori, Hirokazu – sequence: 6 givenname: Toshiaki surname: Fukuhara fullname: Fukuhara, Toshiaki |
BookMark | eNrjYmDJy89L5WSwC8jPqcxNLVJIzs8tyC_NS9FRKEotziwuUchNLEktykzMUUjMS1EoSCwB8vIU0vKLgOKZ-XkKuaklGfkpPAysaYk5xam8UJqbQcHNNcTZQ7e0GKglNa-kOD69KBFEGZgbmlmaGhsYE6EEAFtHM5I |
ContentType | Patent |
CorporateAuthor | Matsushita Electric Industrial Co., Ltd |
CorporateAuthor_xml | – name: Matsushita Electric Industrial Co., Ltd |
DBID | EFH |
DatabaseName | USPTO Issued Patents |
DatabaseTitleList | |
Database_xml | – sequence: 1 dbid: EFH name: USPTO Issued Patents url: http://www.uspto.gov/patft/index.html sourceTypes: Open Access Repository |
DeliveryMethod | fulltext_linktorsrc |
ExternalDocumentID | 07169530 |
GroupedDBID | EFH |
ID | FETCH-uspatents_grants_071695303 |
IEDL.DBID | EFH |
IngestDate | Sun Mar 05 22:32:34 EST 2023 |
IsOpenAccess | true |
IsPeerReviewed | false |
IsScholarly | false |
Language | English |
LinkModel | DirectLink |
MergedId | FETCHMERGED-uspatents_grants_071695303 |
OpenAccessLink | https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/7169530 |
ParticipantIDs | uspatents_grants_07169530 |
PatentNumber | 7169530 |
PublicationCentury | 2000 |
PublicationDate | 20070130 |
PublicationDateYYYYMMDD | 2007-01-30 |
PublicationDate_xml | – month: 01 year: 2007 text: 20070130 day: 30 |
PublicationDecade | 2000 |
PublicationYear | 2007 |
References | Lamanna et al. (6841333) 20050100 Fujigaya, Tsuyohiko et al., "New Photoresist Materials for 157-nm Lithography", Chemistry of Materials, vol. 15, No. 7, pp. 1512-1517, 2003. (63-27829) 19880200 (WO 98/14831) 19980400 (2000-330289) 20001100 (10-10739) 19980100 (9-73173) 19970300 Crivello et al. (5310619) 19940500 (2004-83873) 20040300 (2-27660) 19900600 (2000-33028) 20000200 (9-230595) 19970900 Dammel (2005/0147915) 20050700 Iimori, H. et al., "A New Photoresist Materials for 157nm Lithograhpy-3", Journal of Photopolymer Science and Technology, vol. 16, No. 4, pp. 601-605, 2003. Fujigaya, T. et al., "A New Photoresist Material for 157 nm Lithography-2", Journal of Photopolymer Science and Technology, vol. 15, No. 4, pp. 643-654, 2002. (2003-270789) 20030900 (WO 97/33198) 19970900 Crivello et al. (5362607) 19941100 Ito et al. (4491628) 19850100 (57-153433) 19820900 (WO 99/49504) 19990900 Japanese Office Action issued in corresponding Japanese Patent Application No. 2004-278183, Dated Aug. 22, 2006. (9-227330) 19970900 (2002-250215) 20020900 |
References_xml | – year: 19941100 ident: 5362607 contributor: fullname: Crivello et al. – year: 20001100 ident: 2000-330289 – year: 19990900 ident: WO 99/49504 – year: 19980400 ident: WO 98/14831 – year: 19880200 ident: 63-27829 – year: 19850100 ident: 4491628 contributor: fullname: Ito et al. – year: 19980100 ident: 10-10739 – year: 19970900 ident: WO 97/33198 – year: 19970900 ident: 9-227330 – year: 19900600 ident: 2-27660 – year: 20050100 ident: 6841333 contributor: fullname: Lamanna et al. – year: 20050700 ident: 2005/0147915 contributor: fullname: Dammel – year: 20020900 ident: 2002-250215 – year: 19940500 ident: 5310619 contributor: fullname: Crivello et al. – year: 20000200 ident: 2000-33028 – year: 19820900 ident: 57-153433 – year: 20030900 ident: 2003-270789 – year: 19970900 ident: 9-230595 – year: 19970300 ident: 9-73173 – year: 20040300 ident: 2004-83873 |
Score | 2.6695955 |
Snippet | 12 3 4 5 6 7 28910 11 13213213 122138910 11 132131213 12213 13 The base polymer of a resist material contains a polymer compound including a first unit... |
SourceID | uspatents |
SourceType | Open Access Repository |
Title | Polymer compound, resist material and pattern formation method |
URI | https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/7169530 |
hasFullText | 1 |
inHoldings | 1 |
isFullTextHit | |
isPrint | |
link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV1LT8MwDLbGhAScQIAYL-XAkUDWJl172QWtqpBAPYC029RHwmVLq7YT2r_HTqeKC1wTybESJ_YX2Z8BHgqpcik0wZJZzmVRSB56csZVFkQK7QWdNNUOv70Hyad8XarlCJKhFmaD14jXqEv7tG3rrnLJlfi89wfPe_Jn4gi0xD7wbddVVqaleSbWF-UjeD8IBaV2LeLkBI5QBIZstmt_OY34FA5TN3oGI23PYZ5W691GN4yyuKmZ0SNDqIu7zDBodHbAENWz2hFeWjZUFbK-yfMFsHjx8ZLwYbHVV0NJLCuxV8q_hDGCeX0FzJvqIIpKL8sjIaeiiIoyJExglMkD35gJTP4Uc_3P3A0c97-O9Jt0C-Ou2eo7dJddfu_24gf7PXX6 |
link.rule.ids | 230,309,786,808,891,64394 |
linkProvider | USPTO |
linkToPdf | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV07T8MwED5VBfGYQIAoTw-MGNLETpuFBRqFV5UBpG5RHjZL60RJKsS_585BEQustmRb57M_f6e7zwBXuZCZcBTRkknGRZ4LPnXFhMvUDyT6C4I01Q6_zv3oXTwt5GIAUV8Ls8JjxCtcS3Ozbqq2tMmVeL13G8878WfSCDSkPvBplmVaxIW-JdUX6SF53yCMJRX9WRjtwjYOgo820za_YCPcg83Ytu7DQJkDuIvL5ddK1YzyuOk7o2uGZBftzPDZaD2BIa9nlZW8NKyvK2TdN8-HwMLZ233E-8mSj5rSWBLnZ1neEQyRzqtjYO5Y-UFQuGkWOGLs5EFeTIkVaKkz39N6BKM_hzn5p-8StuKHMHl5nD-fwk4XgqTQ0hkM23qtzhE72-zCmuUb7Nt49A |
openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=Polymer+compound%2C+resist+material+and+pattern+formation+method&rft.inventor=Kishimura%2C+Shinji&rft.inventor=Endo%2C+Masayuki&rft.inventor=Sasago%2C+Masaru&rft.inventor=Ueda%2C+Mitsuru&rft.inventor=Imori%2C+Hirokazu&rft.inventor=Fukuhara%2C+Toshiaki&rft.number=7169530&rft.date=2007-01-30&rft.externalDBID=n%2Fa&rft.externalDocID=07169530 |