Polymer compound, resist material and pattern formation method

• Main Authors: Kishimura, Shinji, Endo, Masayuki, Sasago, Masaru, Ueda, Mitsuru, Imori, Hirokazu, Fukuhara, Toshiaki
• Format: Patent
• Language: English
• Published: 30.01.2007

12 3 4 5 6 7 28910 11 13213213 122138910 11 132131213 12213 13 The base polymer of a resist material contains a polymer compound including a first unit represented by a general formula of the following Chemical Formula 4 and a second unit represented by a general formula of the following Chemical Formula 5: wherein R, Rand Rare the same or different and are a hydrogen atom, a fluorine atom, or a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20; Ris a straight-chain alkylene group or a branched or cyclic alkylene group with a carbon number not less than 0 and not more than 20; Rand Rare the same or different and are a hydrogen atom, a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20, or a protecting group released by an acid; Ris a methylene group, an oxygen atom, a sulfur atom or -SO-; R, R, Rand Rare the same or different and are a hydrogen atom, a fluorine atom, a hydroxyl group, -OR, COR, -R-ORor -R-COR, at least one of R, R, Rand Rincluding -OR, -COR, -R-ORor -R-COR(wherein R 2 is a straight-chain alkylene group, a branched or cyclic alkylene group or a fluoridated alkylene group with a carbon number not less than 1 and not more than 20 and Ris a hydrogen atom, a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20, or a protecting group released by an acid); 0<a<1; 0<b<1; and c is 0 or 1.