Non-volatile semiconductor memory device

• Main Authors: Kato, Junichi, Nakayama, Masayoshi, Ozeki, Takao, Miyoshi, Asako, Hatakeyama, Shinichi
• Format: Patent
• Language: English
• Published: 09.01.2007

A switch section connects a first wire line aSL to the gate of a first memory transistor and the source of a second memory transistor and a second wire line bSL to the source of the first memory transistor and the gate of the second memory transistor when first type data is to be written into a memo...