Non-volatile semiconductor memory device

A switch section connects a first wire line aSL to the gate of a first memory transistor and the source of a second memory transistor and a second wire line bSL to the source of the first memory transistor and the gate of the second memory transistor when first type data is to be written into a memo...

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Bibliographic Details
Main Authors Kato, Junichi, Nakayama, Masayoshi, Ozeki, Takao, Miyoshi, Asako, Hatakeyama, Shinichi
Format Patent
LanguageEnglish
Published 09.01.2007
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Summary:A switch section connects a first wire line aSL to the gate of a first memory transistor and the source of a second memory transistor and a second wire line bSL to the source of the first memory transistor and the gate of the second memory transistor when first type data is to be written into a memory cell; and connects the first wire line aSL to the source of the first memory transistor and the gate of the second memory transistor and the second wire line bSL to the gate of the first memory transistor and the source of the second memory transistor when second type data is to be written into a memory cell.