Non-volatile semiconductor memory device

A switch section connects a first wire line aSL to the gate of a first memory transistor and the source of a second memory transistor and a second wire line bSL to the source of the first memory transistor and the gate of the second memory transistor when first type data is to be written into a memo...

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Main Authors Kato, Junichi, Nakayama, Masayoshi, Ozeki, Takao, Miyoshi, Asako, Hatakeyama, Shinichi
Format Patent
LanguageEnglish
Published 09.01.2007
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Abstract A switch section connects a first wire line aSL to the gate of a first memory transistor and the source of a second memory transistor and a second wire line bSL to the source of the first memory transistor and the gate of the second memory transistor when first type data is to be written into a memory cell; and connects the first wire line aSL to the source of the first memory transistor and the gate of the second memory transistor and the second wire line bSL to the gate of the first memory transistor and the source of the second memory transistor when second type data is to be written into a memory cell.
AbstractList A switch section connects a first wire line aSL to the gate of a first memory transistor and the source of a second memory transistor and a second wire line bSL to the source of the first memory transistor and the gate of the second memory transistor when first type data is to be written into a memory cell; and connects the first wire line aSL to the source of the first memory transistor and the gate of the second memory transistor and the second wire line bSL to the gate of the first memory transistor and the source of the second memory transistor when second type data is to be written into a memory cell.
Author Nakayama, Masayoshi
Ozeki, Takao
Miyoshi, Asako
Kato, Junichi
Hatakeyama, Shinichi
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References Shukuri (6529407) 20030300
Shukuri et al. (6614684) 20030900
(6-268180) 19940900
Matsuo et al. (5646885) 19970700
Ching (6094368) 20000700
Maruyama et al. (6188608) 20010200
Kato et al. (RE37311) 20010800
Ohtani et al. (6545915) 20030400
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Yatsuda et al. (5519244) 19960500
Fujio Masoka et al., "Furasshu Memori Gijyutsu Hando Bukku [Flash Memory Technical Handbook]" Aug. 15, 1993, Science Forum, p. 37.
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