Method for manufacturing semiconductor power device
A semiconductor device, which has a relatively low ON resistance, is manufactured using the following steps. First, a semiconductor wafer that includes a semiconductor layer and a semiconductor element layer, which is located on the semiconductor layer, is formed. Then, the wafer is ground evenly to...
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| Main Authors | , |
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| Format | Patent |
| Language | English |
| Published |
12.12.2006
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| Online Access | Get full text |
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| Summary: | A semiconductor device, which has a relatively low ON resistance, is manufactured using the following steps. First, a semiconductor wafer that includes a semiconductor layer and a semiconductor element layer, which is located on the semiconductor layer, is formed. Then, the wafer is ground evenly to a predetermined thickness from the side where the semiconductor layer is located. Next, the wafer is etched to a predetermined thickness from the side where the semiconductor layer is located while the periphery of the wafer is masked against the etchant to form a rim at the periphery. The wafer is reinforced by the rim at the periphery, so even if the wafer is relatively large, the wafer is prevented from breaking or warping at the later steps after the wafer is thinned by etching. |
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