Transfer-molded power device and method for manufacturing transfer-molded power device

A semiconductor device includes a semiconductor chip that generates heat in operation, a pair of heat sinks for cooling the chip, and a mold resin, in which the chip and the heat sinks are embedded. The thickness t of the chip and the thickness t of one of heat sinks that is joined to the chip using...

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Bibliographic Details
Main Authors Hirano, Naohiko, Teshima, Takanori, Nakase, Yoshimi, Yagi, Kenji, Ookura, Yasushi, Mamitsu, Kuniaki, Nomura, Kazuhito, Fukuda, Yutaka
Format Patent
LanguageEnglish
Published 05.12.2006
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Summary:A semiconductor device includes a semiconductor chip that generates heat in operation, a pair of heat sinks for cooling the chip, and a mold resin, in which the chip and the heat sinks are embedded. The thickness t of the chip and the thickness t of one of heat sinks that is joined to the chip using a solder satisfy the equation of t/t≧5. Furthermore, the thermal expansion coefficient α of the heat sinks and the thermal expansion coefficient α of the mold resin satisfy the equation of 0.5≦α≦1.5. In addition, the surface of the chip that faces the solder has a roughness Ra that satisfies the equation of Ra≦500 nm. Moreover, the solder is a Sn-based solder to suppress relaxation of a compressive stress in the chip, which is caused by the creeping of the solder.