He treatment to improve low-k adhesion property

A method of improving adhesion of low dielectric constant films to other dielectric films is described. A low dielectric constant material layer is deposited on a substrate. The low dielectric constant material layer is treated with helium plasma. An overlying layer is deposited on the low dielectri...

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Bibliographic Details
Main Authors Lu, Wei, Goh Loh Nah, Luona, Sudijono, John
Format Patent
LanguageEnglish
Published 05.12.2006
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Summary:A method of improving adhesion of low dielectric constant films to other dielectric films is described. A low dielectric constant material layer is deposited on a substrate. The low dielectric constant material layer is treated with helium plasma. An overlying layer is deposited on the low dielectric constant material layer wherein there is good adhesion between the low dielectric constant material layer and the overlying layer.