Strained silicon device manufacturing method

• Main Authors: Huang, Chien-Chao, Huang, Cheng-Chuan, Yang, Fu-Liang
• Format: Patent
• Language: English
• Published: 14.11.2006

A method of manufacturing a microelectronic device includes forming a p-channel transistor on a silicon substrate by forming a poly gate structure over the substrate and forming a lightly doped source/drain region in the substrate. An oxide liner and nitride spacer are formed adjacent to opposing si...