Resist polymer, resist composition and patterning process

123 6 34 5 7 110 A polymer comprising recurring units of formulae (1), (2), (3) and (4) increases a dissolution rate in an alkali developer under the action of an acid. R, R, Rand Rare H or CH, Rand Rare H or OH, X is a tertiary exo-alkyl group having a bicyclo[2.2.1]heptane framework, represented b...

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Main Authors Watanabe, Takeru, Nishi, Tsunehiro, Tsuchiya, Junji, Funatsu, Kenji, Hasegawa, Koji
Format Patent
LanguageEnglish
Published 14.11.2006
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Abstract 123 6 34 5 7 110 A polymer comprising recurring units of formulae (1), (2), (3) and (4) increases a dissolution rate in an alkali developer under the action of an acid. R, R, Rand Rare H or CH, Rand Rare H or OH, X is a tertiary exo-alkyl group having a bicyclo[2.2.1]heptane framework, represented by any of formulae (X-1) to (X-4): wherein Ris C-Calkyl, and Y is a tertiary alkyl group having an adamantane structure. A resist composition comprising the inventive polymer has a sensitivity to high-energy radiation, improved resolution and minimized proximity bias and lends itself to micropatterning with electron beams or deep UV for VLSI fabrication.
AbstractList 123 6 34 5 7 110 A polymer comprising recurring units of formulae (1), (2), (3) and (4) increases a dissolution rate in an alkali developer under the action of an acid. R, R, Rand Rare H or CH, Rand Rare H or OH, X is a tertiary exo-alkyl group having a bicyclo[2.2.1]heptane framework, represented by any of formulae (X-1) to (X-4): wherein Ris C-Calkyl, and Y is a tertiary alkyl group having an adamantane structure. A resist composition comprising the inventive polymer has a sensitivity to high-energy radiation, improved resolution and minimized proximity bias and lends itself to micropatterning with electron beams or deep UV for VLSI fabrication.
Author Nishi, Tsunehiro
Watanabe, Takeru
Tsuchiya, Junji
Hasegawa, Koji
Funatsu, Kenji
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References Nishi et al. (2003/0054289) 20030300
Kinsho et al. (6312867) 20011100
Kobayashi et al. (2003/0013039) 20030100
(9-73173) 19970300
(2003-84438) 20030300
Nozaki et al. (5968713) 19991000
Nishi et al. (6703183) 20040300
(2000-336121) 20001200
(4-39665) 19920200
Nishi et al. (2003/0054290) 20030300
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