Resist polymer, resist composition and patterning process

123 6 34 5 7 110 A polymer comprising recurring units of formulae (1), (2), (3) and (4) increases a dissolution rate in an alkali developer under the action of an acid. R, R, Rand Rare H or CH, Rand Rare H or OH, X is a tertiary exo-alkyl group having a bicyclo[2.2.1]heptane framework, represented b...

Full description

Saved in:
Bibliographic Details
Main Authors Watanabe, Takeru, Nishi, Tsunehiro, Tsuchiya, Junji, Funatsu, Kenji, Hasegawa, Koji
Format Patent
LanguageEnglish
Published 14.11.2006
Online AccessGet full text

Cover

More Information
Summary:123 6 34 5 7 110 A polymer comprising recurring units of formulae (1), (2), (3) and (4) increases a dissolution rate in an alkali developer under the action of an acid. R, R, Rand Rare H or CH, Rand Rare H or OH, X is a tertiary exo-alkyl group having a bicyclo[2.2.1]heptane framework, represented by any of formulae (X-1) to (X-4): wherein Ris C-Calkyl, and Y is a tertiary alkyl group having an adamantane structure. A resist composition comprising the inventive polymer has a sensitivity to high-energy radiation, improved resolution and minimized proximity bias and lends itself to micropatterning with electron beams or deep UV for VLSI fabrication.