Semiconductor device with floating block

A band gap circuit using NPN transistors having collectors connected to a power source voltage is employed, and transistor active regions of the NPN transistors and semiconductor elements constituting other signal processing circuits are integrated in the same floating block with high voltage resist...

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Bibliographic Details
Main Authors Inao, Masashi, Matsunaga, Hiroki
Format Patent
LanguageEnglish
Published 31.10.2006
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Summary:A band gap circuit using NPN transistors having collectors connected to a power source voltage is employed, and transistor active regions of the NPN transistors and semiconductor elements constituting other signal processing circuits are integrated in the same floating block with high voltage resistance. As a result, a reference voltage circuit used in the signal processing circuit can be integrated in a compact manner.