Nonvolatile memory device and method of manufacturing the same

Provided are a nonvolatile memory device and a method of manufacturing the same. The device includes a semiconductor substrate; a source region and a drain region disposed in the semiconductor substrate and a channel region interposed between the source and drain regions; a first tunnel oxide layer...

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Bibliographic Details
Main Authors Chae, Hee-soon, Kim, Chung-woo, Seo, Kwang-youl, Han, Tae-hyun, Kim, Byung-chul, Kim, Joo-yeon
Format Patent
LanguageEnglish
Published 26.09.2006
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Summary:Provided are a nonvolatile memory device and a method of manufacturing the same. The device includes a semiconductor substrate; a source region and a drain region disposed in the semiconductor substrate and a channel region interposed between the source and drain regions; a first tunnel oxide layer disposed on the channel region near the source region; a second tunnel oxide layer disposed on the channel region near the drain region; a first charge trapping layer disposed on the first tunnel oxide layer; a second charge trapping layer disposed on the second tunnel oxide layer; a blocking oxide layer covering the first and second charge trapping layers; a charge isolation layer interposed between the first and second charge trapping layers; and a gate electrode disposed on the blocking oxide layer.